Naslov
Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers

Autori
Osrečki, Željko ; Žilak, Josip ; Koričić, Marko ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / - : Institute of Electrical and Electronics Engineers (IEEE), 2019, 1-4

ISBN
978-1-7281-0587-1

Skup
IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS 2019 )

Mjesto i datum
Nashville (TN), Sjedinjene Američke Države, 03.11.2019. - 06.11.2019

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Horizontal Current Bipolar Transistor (HCBT) , Wireless communications , Power amplifiers

Sažetak
The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT structures for RF power amplifiers. Firstly, the DC collector current is chosen for each transistor considering the maximum power gain and the Kirk effect. The collector-emitter voltage is set at a value for which the maximum collector efficiency is achieved. The HCBT with the lowest-doped n-collector provides a wideband large-signal performance due to the near-50 Ω optimal impedances, achieving output power, gain, and efficiency of 21.8 dBm, 10.8 dB, and 45.3%, respectively, at 2.4 GHz. Due to a lower knee voltage, the HCBT with the highest doped n-collector provides the highest efficiency of 22.4% for low input powers, compared to 15.4% for the lowest-doped n- collector device. Therefore, various HCBT structures can be utilized to achieve wide bandwidth and high efficiency in the low-power region.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA