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Pregled bibliografske jedinice broj: 1086737

On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies


Suligoj, Tomislav; Žilak, Josip; Osrečki, Željko; Koričić, Marko
On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies // ECS Transactions / Jeffrey W. Fergus (ur.).
Honolulu (HI), Sjedinjene Američke Države: The Electrochemical Society (ECS), 2020. str. 111-117 doi:10.1149/09805.0111ecst (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


CROSBI ID: 1086737 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies

Autori
Suligoj, Tomislav ; Žilak, Josip ; Osrečki, Željko ; Koričić, Marko

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
ECS Transactions / Jeffrey W. Fergus - : The Electrochemical Society (ECS), 2020, 111-117

Skup
238th Meeting of the Electrochemical Society

Mjesto i datum
Honolulu (HI), Sjedinjene Američke Države, 04.10.2020. - 09.10.2020

Vrsta sudjelovanja
Pozvano predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
bipolar transistor ; Horizontal Current Bipolar Transistor (HCBT) ; SiGe ; TCAD

Sažetak
The potential of lateral bipolar transistors, based on Horizontal Current Bipolar Transistor (HCBT), in scaled CMOS technologies are examined by TCAD simulations. Thorough and consistent simulations show that SiGe HCBT can achieve fT/fmax of 358/490 GHz outperforming standard vertical-current HBT with fT/fmax of 348/423 GHz, assuming the same intrinsic transistor doping profile. By optimizing the extrinsic base shape and width, the characteristics of SiGe HCBT can be further improved. SiGe HCBTs in bulk silicon substrates result in better performance comparing to the transistors in SOI substrates.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tomislav Suligoj (autor)

Avatar Url Josip Žilak (autor)

Avatar Url Željko Osrečki (autor)

Avatar Url Marko Koričić (autor)

Poveznice na cjeloviti tekst rada:

doi iopscience.iop.org

Citiraj ovu publikaciju:

Suligoj, Tomislav; Žilak, Josip; Osrečki, Željko; Koričić, Marko
On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies // ECS Transactions / Jeffrey W. Fergus (ur.).
Honolulu (HI), Sjedinjene Američke Države: The Electrochemical Society (ECS), 2020. str. 111-117 doi:10.1149/09805.0111ecst (pozvano predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Suligoj, T., Žilak, J., Osrečki, Ž. & Koričić, M. (2020) On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies. U: Jeffrey W. Fergus (ur.)ECS Transactions doi:10.1149/09805.0111ecst.
@article{article, author = {Suligoj, Tomislav and \v{Z}ilak, Josip and Osre\v{c}ki, \v{Z}eljko and Kori\v{c}i\'{c}, Marko}, year = {2020}, pages = {111-117}, DOI = {10.1149/09805.0111ecst}, keywords = {bipolar transistor, Horizontal Current Bipolar Transistor (HCBT), SiGe, TCAD}, doi = {10.1149/09805.0111ecst}, title = {On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies}, keyword = {bipolar transistor, Horizontal Current Bipolar Transistor (HCBT), SiGe, TCAD}, publisher = {The Electrochemical Society (ECS)}, publisherplace = {Honolulu (HI), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }
@article{article, author = {Suligoj, Tomislav and \v{Z}ilak, Josip and Osre\v{c}ki, \v{Z}eljko and Kori\v{c}i\'{c}, Marko}, year = {2020}, pages = {111-117}, DOI = {10.1149/09805.0111ecst}, keywords = {bipolar transistor, Horizontal Current Bipolar Transistor (HCBT), SiGe, TCAD}, doi = {10.1149/09805.0111ecst}, title = {On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies}, keyword = {bipolar transistor, Horizontal Current Bipolar Transistor (HCBT), SiGe, TCAD}, publisher = {The Electrochemical Society (ECS)}, publisherplace = {Honolulu (HI), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }

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