Naslov
Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode

Autori
Lovro Marković ; Tihomir Knežević ; Tomislav Suligoj

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO) / - , 2020, 28-33

Skup
43nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2020)

Mjesto i datum
Opatija, Hrvatska, 28.09.2020. - 02.10.2020

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
aluminum ; germanium ; Schottky barriers ; semiconductor defects ; epitaxial growth ; heterojunctions ; Ge-on-Si

Sažetak
In this work, different mechanisms that could cause degradation of the ideality factor in Al/Ge Schottky diodes on Si substrate are examined. Measured I-V characteristics of Schottky diodes have been fitted by the model of the diode developed in TCAD environment. The effects of Shockley-Read-Hall recombination parameters of epitaxial Ge on the I-V characteristics are simulated. The impact of interface traps on both Al/Ge and Ge/Si interfaces, as well as the effect of a buffer oxide layer on Al/Ge interface are analyzed by simulations providing a possible explanation for a degraded ideality factor in Al/Ge-on-Si Schottky diodes.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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