Naslov
Material and device properties of bismuthene nanoribbons from multi-orbital quantum transport simulations

Autori
Poljak, Mirko

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of Intl. Conv. MIPRO-MEET (Microelectronics, Electronics and Electronic Technology) / Skala, Karolj - Rijeka, 2020, 41-45

Skup
43rd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2020) ; Microelectronics, Electronics and Electronic Technology (MEET 2020)

Mjesto i datum
Opatija, Hrvatska, 28.09.2020. - 02.10.2020

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
bismuthene ; nanoribbon ; quantum transport ; atomistic simulation ; bandstructure ; FET

Sažetak
A multi-orbital tight-binding Hamiltonian is employed to study the electronic, transport and ballistic device properties of bismuthene nanoribbons (BiNRs) within the non-equilibrium Green's function (NEGF) formalism. We report the bandgap-width dependence that demonstrates an increase from 0.57 eV to 0.84 eV when the BiNR width is downscaled from 10.3 nm to 1.1 nm. The relevance of BiNRs for logic device applications at the nanoscale is further analyzed by studying the width dependence of the ON and OFF state conductance and their ratio that reaches ~10^7 in 1.1 nm-wide BiNRs. Moreover, BiNR FET simulations reveal ballistic ON-state drain currents of up to 5.1 mA/μm, surpassing those of graphene nanoribbon FETs by 38% at 0.5 V supply voltage.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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