Naslov
Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series Resistance

Autori
Poljak, Mirko ; Matić, Mislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) / Mori, Nobuya ; Kamakura, Yoshinari - Kobe : The Japan Society of Applied Physics, 2020, 371-374

Skup
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2020)

Mjesto i datum
Kobe, Japan; online, 23.09.2020. - 06.10.2020

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
ballisticity, FET, metal contacts, nanoribbon, NEGF, phosphorene, series resistance, quantum transport

Sažetak
Performance of phosphorene nanoribbon (PNR) MOSFETs at "3 nm" logic technology node is studied using atomistic quantum transport simulations, with an emphasis on the impact of metal contacts, series resistance and transport ballisticity. We find that realistic metal contacts decrease drain current by up to 70%, which corresponds to more than 1400 Ωμm in contact resistance (RSD). On the other hand, setting RSD to 270 Ωμm, as foreseen by the International Roadmap for Devices and Systems (IRDS), PNR MOSFETs would need to operate at 50% to 70% of their ballistic limit, depending on PNR width, in order to meet IRDS targets.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA