Pregled bibliografske jedinice broj: 1075771
Impact of Width Scaling and Parasitic Series Resistance on the Performance of Silicene Nanoribbon MOSFETs
Impact of Width Scaling and Parasitic Series Resistance on the Performance of Silicene Nanoribbon MOSFETs // IEEE Transactions on Electron Devices, 67 (2020), 11; 4705-4708 doi:10.1109/TED.2020.3017465 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 1075771 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Impact of Width Scaling and Parasitic Series Resistance on the Performance of Silicene Nanoribbon MOSFETs
Autori
Poljak, Mirko
Izvornik
IEEE Transactions on Electron Devices (0018-9383) 67
(2020), 11;
4705-4708
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
ballisticity, MOSFET, nanoribbon, non-equilibrium Green’s function (NEGF), quantum transport, series resistance, silicene
Sažetak
Performance of 15 nm-gate-length MOSFETs based on silicene nanoribbons (SiNRs) is analyzed with respect to width scaling, series resistance and ballisticity of electron transport. Numerical simulations were based on quantum transport with atomic resolution of nanoribbon Hamiltonians and their bandstructure. Assuming negligible tunneling, we found that SiNR MOSFETs in which the nanoribbons are wider than 2.8 nm can fulfill the requirements set by the International Roadmap for Devices and Systems (IRDS) for the "3 nm" logic node even with 50% ballisticity and parasitic series resistance of 270 Ωμm.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-UIP-2019-04-3493 - Računalno projektiranje nanotranzistora temeljenih na novim 2D materijalima (CONAN2D) (Poljak, Mirko, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Mirko Poljak
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
