Pregled bibliografske jedinice broj: 1068444
Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source
Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source // Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 956 (2020) doi:10.1016/j.nima.2019.163381 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 1068444 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Measurement of the relative response of small-electrode CMOS
sensors at Diamond Light Source
Autori
Mironova, M. ; Metodiev, K. ; Allport, P. ; Berdalovic, I. ; Bortoletto, D. ; Buttar, C. ; Cardella, R. ; Dao, V. ; Dyndal, M. ; Freeman, P. ; Flores Sanz de Acedo, L. ; Gonella, L. ; Kugathasan, T. ; Pernegger, H. ; Piro, F. ; Plackett, R. ; Riedler, P. ; Sharma, A. ; Schioppa, E.J. ; Shipsey, I. ; Solans Sanchez, C. ; Snoeys, W. ; Wennlöf, H. ; Weatherill, D. ; Wood, D. ; Worm, S.
Izvornik
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (0168-9002) 956
(2020);
163381, 0
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Monolithic active pixel sensors ; CMOS sensors ; Radiation-hard detectors ; Synchrotron light source ; TowerJazz ; MALTA
Sažetak
This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 um steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n- layer layout and front-end, and extra deep p-well and n- gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 neq/cm2. For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Ivan Berdalović
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus