Naslov
Design of radiation-hard CMOS sensors for particle detection applications

Autori
Berdalovic, Ivan

Vrsta, podvrsta i kategorija rada
Ocjenski radovi, doktorska disertacija

Fakultet
Fakultet elektrotehnike i računarstva

Mjesto
Zagreb

Datum
29.10

Godina
2019

Stranica
120

Mentor
Suligoj, Tomislav

Ključne riječi
Active pixel sensors, CMOS integrated circuits, position sensitive particle de- tectors, radiation effects, radiation hardening (electronics), semiconductor detectors, solid-state circuit design

Sažetak
The work focuses on the design of large-scale radiation-hard monolithic CMOS sensors for the upgrades of the detectors in the high-energy physics experiments at CERN. The sensors are manufactured using a novel process modification implemented in the TowerJazz 180 nm CMOS process, which uses small collection electrodes to achieve a low sensor capacitance in the order of a few femtofarads, resulting in low noise and low analogue power consumption. The process modification provides full depletion of the sensitive layer and a radiation hardness promising to meet the requirements of the pixel detectors in CERN’s largest experiments. The sensors implement a matrix of small pixels (in the order of 30 micrometres) containing a fast, low-noise front-end amplifier and a novel asynchronous digital readout architecture. Measurement results from these sensors before and after irradiation are also discussed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika

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