Naslov
Dynamics of the radiation induced defects in semiconductors studied by pulsed ion beams and micro RBS channeling

Autori
Crnjac, A ; Fazinić, S ; Jakšić, M

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Abstract Book - 13th European Conference on Accelerators in Applied Research and Technology / Siketić, Z ; Crnjac, A ; Brajković, M ; Barac, M ; Vukšić, M - Zagreb : Institut Ruđer Bošković, 1999

ISBN
978-953-7941-30-7

Skup
13th European Conference on Accelerators in Applied Research and Technology

Mjesto i datum
Split, Hrvatska, 05.05.2019. - 10.05.2019

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
RBS channeling, ion microprobe, semiconductors

Sažetak
Irradiation with pulsed ion beams is used to induce defects in semiconductor materials. Point defects are created around ion tracks in the crystal lattice. Pulsed pause time allows for defects recombinations before new radiation sequence. Defect dynamics are studied by varying pulsed pause times and controlling sample temperature. Relative number of defects in irradiated areas is quantified by means of RBS channeling technique, which was performed ex-situ. During channeling, beam spot size is focused to less than 10 micrometer dimension, and beam scanning allows to locate irradiated areas with RBSc used as the microscopic position sensitive technique. Experiment results are used to interpret the effect of beam pulsing time and sample temperature on the relative number of radiation induced defects in investigated semiconductor materials.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA