Naslov
Intrinsic Capabilities for Digital Switching of Silicene Nanoribbons with Edge Defects

Autori
Poljak, Mirko

Izvornik
IEEE transactions on electron devices (0018-9383) 67 (2020), 1; 354-359

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicene nanoribbons, quantum transport, NEGF, edge defects, variability, conductance, switching

Sažetak
Statistical atomistic quantum transport simulations are employed to study the prospects of digital switching in silicene nanoribbons (SiNRs) with edge defects. For various nanoribbon widths and defect levels, we study averaged parameters (such as bandgap and conductance in the ON and OFF state) and their defect-induced variability. We report that moderately defective SiNRs exhibit up to 30% larger bandgaps than their ideal counterparts, bringing it to about 0.5 eV, and ON-OFF conductance ratios in the range from ~10^3 to ~10^6. In terms of resilience to edge defects, we demonstrate that SiNRs are less immune to defects than phosphorene nanoribbons, while they are considerably more resistant than graphene nanoribbons.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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