Pregled bibliografske jedinice broj: 1032148
Design of a scalable model of GaN devices - temperature effects and Schottky diode models
Design of a scalable model of GaN devices - temperature effects and Schottky diode models, 2015. (ekspertiza).
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Naslov
Design of a scalable model of GaN devices - temperature effects and Schottky diode models
Autori
Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko
Izvornik
Gallium-nitride device process design kit development
Vrsta, podvrsta
Ostale vrste radova, ekspertiza
Godina
2015
Ključne riječi
GaN ; HEMT ; scalable model ; process design kit
Sažetak
Development of a process design kit for gallium-nitride HEMTs. Analysis of DC and RF characteristics with respect to device scaling. Added temperature effects and Schottky diode models.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
