Pregled bibliografske jedinice broj: 1028712
Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C
Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C // Proceedings of the ESSDERC 49th European Solid- State Device Research Conference
Kraków, Poljska: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 1028712 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C
Autori
Knežević, Tihomir ; Elsayed, Ahmed ; Dick, Jan F. ; Liu, Xingyu ; Schulze, Joerg ; Suligoj, Tomislav ; Nanver, Lis K.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the ESSDERC 49th European Solid- State Device Research Conference
/ - : Institute of Electrical and Electronics Engineers (IEEE), 2019, 242-245
ISBN
978-1-7281-1538-2
Skup
49th European Solid-State Device Research Conference
Mjesto i datum
Kraków, Poljska, 23.09.2019. - 26.09.2019
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
chemical vapor deposition (CVD), electron injection, fixed interface charge, molecular beam epitaxy (MBE), pure antimony, pure boron, Silicon diodes, ultra-shallow junctions
Sažetak
Pure boron deposited on silicon for the formation of p+n-like junctions was studied for deposition temperatures down to 50 °C. The commonly used chemical-vapor deposition method was compared to molecular beam epitaxy with respect to the electrical characteristics and the boron-layer compactness as evaluated by etch tests, ellipsometry and atomic force microscopy. Electrically, the important parameters are minority carrier electron injection into the p-type region and the sheet resistance along the boron-to-silicon interface which appear to be independent of deposition method for temperatures down to 300 °C. Only with molecular beam epitaxy did we succeed in producing substantial layers for the lower temperatures down to 50 °C. Also, at this very low temperature, p+n-like diodes were formed, but the suppression of electron injection was less efficient than at the higher temperatures. From simulations, assuming that the attractive electrical behavior is due to a monolayer of fixed negative charge at the interface, the concentration of holes needed to explain the I- V characteristics is estimated to be 1.4×1011 cm-2 for 50 °C deposition and 1.1×1013 cm-2 for 400 °C.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika, Interdisciplinarne tehničke znanosti
POVEZANOST RADA
Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
