Pregled bibliografske jedinice broj: 1028711
Reverse breakdown and light-emission patterns studied in Si PureB SPADs
Reverse breakdown and light-emission patterns studied in Si PureB SPADs // 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
Opatija: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 30-35 doi:10.23919/mipro.2019.8757007 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 1028711 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Reverse breakdown and light-emission patterns studied in Si PureB SPADs
Autori
Krakers, Max ; Knezevic, T. ; Nanver, L. K.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
/ - Opatija : Institute of Electrical and Electronics Engineers (IEEE), 2019, 30-35
ISBN
978-1-5386-9296-7
Skup
42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2019)
Mjesto i datum
Opatija, Hrvatska, 20.05.2019. - 24.05.2019
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Avalanche breakdown, Avalanche-mode LEDs, Defects, Light-emitting diode (LED), Optocoupler, Pure boron, Silicon, Single-photon avalanche diode (SPAD)
Sažetak
The relationship between light-emission patterns from silicon avalanche-mode light- emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high- quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Interdisciplinarne prirodne znanosti, Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Tihomir Knežević
(autor)
