Pretraga

Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 1028707

Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes

Knežević, Tihomir; Liu, Xingyu; Hardeveld, Erwin; Suligoj, Tomislav; Nanver, Lis K.
Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes // IEEE electron device letters, 40 (2019), 6; 858-861 doi:10.1109/led.2019.2910465 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 1028707 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes

Autori
Knežević, Tihomir ; Liu, Xingyu ; Hardeveld, Erwin ; Suligoj, Tomislav ; Nanver, Lis K.

Izvornik
IEEE electron device letters (0741-3106) 40 (2019), 6; 858-861

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
chemical-vapor deposition ; electron injection ; monolayer ; photodiodes ; pure boron ; silicon ; ultrashallow junction

Sažetak
A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 °C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from 5 × 10 13 cm -2 to 5 × 10 14 cm -2 , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Interdisciplinarne prirodne znanosti, Elektrotehnika



POVEZANOST RADA

Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tomislav Suligoj (autor)

Avatar Url Tihomir Knežević (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Knežević, Tihomir; Liu, Xingyu; Hardeveld, Erwin; Suligoj, Tomislav; Nanver, Lis K.
Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes // IEEE electron device letters, 40 (2019), 6; 858-861 doi:10.1109/led.2019.2910465 (međunarodna recenzija, članak, znanstveni)
Knežević, T., Liu, X., Hardeveld, E., Suligoj, T. & Nanver, L. (2019) Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes. IEEE electron device letters, 40 (6), 858-861 doi:10.1109/led.2019.2910465.
@article{article, author = {Kne\v{z}evi\'{c}, Tihomir and Liu, Xingyu and Hardeveld, Erwin and Suligoj, Tomislav and Nanver, Lis K.}, year = {2019}, pages = {858-861}, DOI = {10.1109/led.2019.2910465}, keywords = {chemical-vapor deposition, electron injection, monolayer, photodiodes, pure boron, silicon, ultrashallow junction}, journal = {IEEE electron device letters}, doi = {10.1109/led.2019.2910465}, volume = {40}, number = {6}, issn = {0741-3106}, title = {Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes}, keyword = {chemical-vapor deposition, electron injection, monolayer, photodiodes, pure boron, silicon, ultrashallow junction} }
@article{article, author = {Kne\v{z}evi\'{c}, Tihomir and Liu, Xingyu and Hardeveld, Erwin and Suligoj, Tomislav and Nanver, Lis K.}, year = {2019}, pages = {858-861}, DOI = {10.1109/led.2019.2910465}, keywords = {chemical-vapor deposition, electron injection, monolayer, photodiodes, pure boron, silicon, ultrashallow junction}, journal = {IEEE electron device letters}, doi = {10.1109/led.2019.2910465}, volume = {40}, number = {6}, issn = {0741-3106}, title = {Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes}, keyword = {chemical-vapor deposition, electron injection, monolayer, photodiodes, pure boron, silicon, ultrashallow junction} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

Citati:

    Altmetrijski pokazatelji:


    Podijeli:





    Contrast
    Increase Font
    Decrease Font
    Dyslexic Font
    CROSBI koristi kolačiće (cookies) kako bi poboljšao funkcionalnost stranice.