Pregled bibliografske jedinice broj: 1028687
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers // International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Opatija: Institute of Electrical and Electronics Engineers (IEEE), 2019. str. 24-29 doi:10.23919/mipro.2019.8757156 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers
Autori
Knezevic, Tihomir ; Suligoj, Tomislav ; Nanver, Lis K.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
/ - Opatija : Institute of Electrical and Electronics Engineers (IEEE), 2019, 24-29
ISBN
978-1-5386-9296-7
Skup
42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2019)
Mjesto i datum
Opatija, Hrvatska, 20.05.2019. - 24.05.2019
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Carrier injection, Negative fixed interface charge, Pure amorphous boron, PureB, TCAD, Ultra-thin-layer
Sažetak
Pure amorphous boron (PureB) deposition on Si is used to fabricate ultrashallow low- saturation-current p+n-like diodes even at process temperatures where the boron is not expected to diffuse into the bulk Si. It has been proposed that the bonding of the B atoms to the Si creates a monolayer of fixed negative charge that attracts holes to the interface. In this paper, an investigation using semiconductor simulation tools is performed starting from an all-Si test structure where suppression of electron injection from an n-Si bulk was achieved by introducing a large concentration of negative fixed charge that attracts holes to the interface between a thin- film top-layer and the bulk. This introduces a barrier which lowers the electron saturation current density of the simulated diode to become comparable to or lower than the saturation current density of holes injected into the bulk. The material properties of the top-layer such as electron mobility and tunneling mass, bandgap and electron affinity are individually varied from default Si-values to values typical for amorphous boron layers indicating that a critical concentration of negative fixed charge is always needed for suppression of the electron injection.
Izvorni jezik
Engleski
Znanstvena područja
Interdisciplinarne prirodne znanosti, Elektrotehnika, Interdisciplinarne tehničke znanosti
POVEZANOST RADA
Projekti:
HRZZ-IP-2018-01-5296 - Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari (NexGenSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
