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Pregled bibliografske jedinice broj: 1022514

Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology

Šegmanović, Filip; Roger, Frederic; Meinhardt, Gerald; Jonak-Auer, Ingrid; Suligoj, Tomislav
Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology // 2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)
Costa Brava, Španjolska, 2018. str. 92-96 doi:10.1109/PATMOS.2018.8464156 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology

Autori
Šegmanović, Filip ; Roger, Frederic ; Meinhardt, Gerald ; Jonak-Auer, Ingrid ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS) / - , 2018, 92-96

Skup
2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)

Mjesto i datum
Costa Brava, Španjolska, 02.07.2018. - 04.07.2018

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Image sensor, Imaging applications, CT scanner, Ionizing radiation, Non-ionizing radiation, Radiation hardness, Radiation damage, TCAD software, Parameter variability, Screening, DoE, Spectral responsivity, Dark current

Sažetak
Many imaging applications, like medical or space applications, require radiation-hard sensors. Generally, during radiation, many different defects are created, depending on the type of the radiation. With TCAD software, cross-section of a radiation-hard photodiode was simulated, and afterwards the impact of different physical parameters was simulated. Physical parameters like epitaxial layer thickness or the trap density in the bulk, play a huge role towards the responsivity of the photodiode. This paper presents a variation experiment, where relevant physical parameters are varied and analysis of the spectral responsivity and dark current of the photodiode is discussed.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Filip Šegmanović (autor)

Avatar Url Tomislav Suligoj (autor)

Poveznice na cjeloviti tekst rada:

doi doi.org

Citiraj ovu publikaciju:

Šegmanović, Filip; Roger, Frederic; Meinhardt, Gerald; Jonak-Auer, Ingrid; Suligoj, Tomislav
Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology // 2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)
Costa Brava, Španjolska, 2018. str. 92-96 doi:10.1109/PATMOS.2018.8464156 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Šegmanović, F., Roger, F., Meinhardt, G., Jonak-Auer, I. & Suligoj, T. (2018) Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology. U: 2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS) doi:10.1109/PATMOS.2018.8464156.
@article{article, author = {\v{S}egmanovi\'{c}, Filip and Roger, Frederic and Meinhardt, Gerald and Jonak-Auer, Ingrid and Suligoj, Tomislav}, year = {2018}, pages = {92-96}, DOI = {10.1109/PATMOS.2018.8464156}, keywords = {Image sensor, Imaging applications, CT scanner, Ionizing radiation, Non-ionizing radiation, Radiation hardness, Radiation damage, TCAD software, Parameter variability, Screening, DoE, Spectral responsivity, Dark current}, doi = {10.1109/PATMOS.2018.8464156}, title = {Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology}, keyword = {Image sensor, Imaging applications, CT scanner, Ionizing radiation, Non-ionizing radiation, Radiation hardness, Radiation damage, TCAD software, Parameter variability, Screening, DoE, Spectral responsivity, Dark current}, publisherplace = {Costa Brava, \v{S}panjolska} }
@article{article, author = {\v{S}egmanovi\'{c}, Filip and Roger, Frederic and Meinhardt, Gerald and Jonak-Auer, Ingrid and Suligoj, Tomislav}, year = {2018}, pages = {92-96}, DOI = {10.1109/PATMOS.2018.8464156}, keywords = {Image sensor, Imaging applications, CT scanner, Ionizing radiation, Non-ionizing radiation, Radiation hardness, Radiation damage, TCAD software, Parameter variability, Screening, DoE, Spectral responsivity, Dark current}, doi = {10.1109/PATMOS.2018.8464156}, title = {Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology}, keyword = {Image sensor, Imaging applications, CT scanner, Ionizing radiation, Non-ionizing radiation, Radiation hardness, Radiation damage, TCAD software, Parameter variability, Screening, DoE, Spectral responsivity, Dark current}, publisherplace = {Costa Brava, \v{S}panjolska} }

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