Naslov
Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35μm CMOS technology

Autori
Šegmanović, Filip ; Roger, Frederic ; Meinhardt, Gerald ; Jonak-Auer, Ingrid ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) / - , 2018, 18-22

Skup
41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2018)

Mjesto i datum
Opatija, Hrvatska, 21.05.2018. - 25.05.2018

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Image sensor, Ionizing radiation, Radiation hardness, TCAD software, Parameter variability, Screening, Design of Experiment, Spectral responsivity, Dark current

Sažetak
In this paper, a variability Design of Experiment (DoE) is performed on a radiation- hard photodiode structure in order to understand how the physical parameters of the device impact its spectral responsivity and dark current. The varied physical parameters describe the carrier mobility, lifetime, energy bandgap and recombination models. The electrical and optical performance of the device are simulated using TCAD software, as a function of varied physical parameters. The simulations are calibrated to the device measurements. The analysis of the design showed that the carrier lifetime is the most influencing parameter that impacts both the spectral responsivity and the dark current. Mobility parameters and Auger recombination parameters impact the spectral responsivity, while the energy bandgap at 340 K impacts the dark current. Finally, the model parameters that fit the measured dark current are obtained by the thorough variation simulations.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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