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Pregled bibliografske jedinice broj: 993453

Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique


Syed, Kamran Ali; Souren, Grigorian; Ullrich, Pietsch
Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique // Journal of applied crystallography, Volume 46| Part 4 (2013), 3; 908-9011 doi:10.1107/S0021889813004718 (međunarodna recenzija, članak, znanstveni)


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Naslov
Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique

Autori
Syed, Kamran Ali ; Souren, Grigorian ; Ullrich, Pietsch

Izvornik
Journal of applied crystallography (0021-8898) Volume 46| Part 4 (2013), 3; 908-9011

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
X-ray diffraction and imaging, Organic field-effect transistors (OFETs), dip-coating, P3HT

Sažetak
Organic field-effect transistors (OFETs) were fabricated by depositing a regioregular poly(3- hexylthiophene) (P3HT) active layer using a dip-coating method. The field-effect mobility in OFETs depends on chain orientation and crystallinity and is related to direction and withdrawal speed with respect to the source/drain orientation. In this paper, how to control the structural and transport properties of P3HT films by coating parallel and perpendicular to the dipping direction is demonstrated. X-ray diffraction curves taken in the perpendicular direction exhibit a higher degree of crystalline ordering and edgeon conformation compared with those in the parallel direction ; this finding correlates with the directional anisotropy of the OFET mobility. Both structural anisotropy and transport properties are enhanced upon thermal treatment.

Izvorni jezik
Engleski



POVEZANOST RADA


Profili:

Avatar Url Kamran Ali Syed (autor)

Poveznice na cjeloviti tekst rada:

doi journals.iucr.org www.ncbi.nlm.nih.gov

Citiraj ovu publikaciju:

Syed, Kamran Ali; Souren, Grigorian; Ullrich, Pietsch
Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique // Journal of applied crystallography, Volume 46| Part 4 (2013), 3; 908-9011 doi:10.1107/S0021889813004718 (međunarodna recenzija, članak, znanstveni)
Syed, K., Souren, G. & Ullrich, P. (2013) Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique. Journal of applied crystallography, Volume 46| Part 4 (3), 908-9011 doi:10.1107/S0021889813004718.
@article{article, author = {Syed, Kamran Ali and Souren, Grigorian and Ullrich, Pietsch}, year = {2013}, pages = {908-9011}, DOI = {10.1107/S0021889813004718}, keywords = {X-ray diffraction and imaging, Organic field-effect transistors (OFETs), dip-coating, P3HT}, journal = {Journal of applied crystallography}, doi = {10.1107/S0021889813004718}, volume = {Volume 46| Part 4}, number = {3}, issn = {0021-8898}, title = {Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique}, keyword = {X-ray diffraction and imaging, Organic field-effect transistors (OFETs), dip-coating, P3HT} }
@article{article, author = {Syed, Kamran Ali and Souren, Grigorian and Ullrich, Pietsch}, year = {2013}, pages = {908-9011}, DOI = {10.1107/S0021889813004718}, keywords = {X-ray diffraction and imaging, Organic field-effect transistors (OFETs), dip-coating, P3HT}, journal = {Journal of applied crystallography}, doi = {10.1107/S0021889813004718}, volume = {Volume 46| Part 4}, number = {3}, issn = {0021-8898}, title = {Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique}, keyword = {X-ray diffraction and imaging, Organic field-effect transistors (OFETs), dip-coating, P3HT} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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