Pregled bibliografske jedinice broj: 992578
Monolithic Pixel Development in 180 nm CMOS for the Outer Pixel Layers in the ATLAS Experiment
Monolithic Pixel Development in 180 nm CMOS for the Outer Pixel Layers in the ATLAS Experiment // Proceedings of Science, Topical Workshop on Electronics for Particle Physics (TWEPP-17)
Santa Cruz (CA), Sjedinjene Američke Države: Sissa Medialab, 2018. 047, 5 doi:10.22323/1.313.0047 (predavanje, nije recenziran, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 992578 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Monolithic Pixel Development in 180 nm CMOS for the Outer Pixel
Layers in the ATLAS Experiment
Autori
Kugathasan, T. ; Bates, R. ; Buttar, C. ; Berdalovic, I. ; Blochet, B. ; Cardella, R. ; Dalla, M. ; Egidos Plaja, N. ; Hemperek, T. ; Van Hoorne, J. W. ; Maneuski, D. ; Marin Tobon, C. A. ; Moustakas, K. ; Mugnier, H. ; Musa, L. ; Pernegger, H. ; Riedler, P. ; Riegel, C. ; Rousset, J. ; Sbarra, C. ; Schaefer, D. M. ; Schioppa, E. J. ; Sharma, A. ; Snoeys, W. ; Solans Sanchez, C. ; Wang, T. ; Wermes, N.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of Science, Topical Workshop on Electronics for Particle Physics (TWEPP-17)
/ - : Sissa Medialab, 2018
Skup
Topical Workshop on Electronics for Particle Physics (TWEPP 17)
Mjesto i datum
Santa Cruz (CA), Sjedinjene Američke Države, 11.09.2017. - 15.09.2017
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Nije recenziran
Ključne riječi
Electronic detector readout concepts (solid-state) ; Front-end electronics for detector readout ; Particle tracking detectors ; Radiation-hard detectors
Sažetak
The ATLAS experiment at CERN plans to upgrade its Inner Tracking System for the High-Luminosity LHC in 2026. After the ALPIDE monolithic sensor for the ALICE ITS was successfully implemented in a 180 nm CMOS Imaging Sensor technology, the process was modified to combine full sensor depletion with a low sensor capacitance (≈ 2.5fF), for increased radiation tolerance and low analog power consumption. Efficiency and charge collection time were measured with comparisons before and after irradiation. This paper summarises the measurements and the ATLAS-specific development towards full-reticle size CMOS sensors and modules in this modified technology.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika