Pregled bibliografske jedinice broj: 947041
Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE
Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE // Crystal growth & design, 16 (2016), 4; 2363-2370 doi:10.1021/acs.cgd.6b00150 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 947041 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE
Autori
Gocalinska, Agnieszka M. ; Manganaro, Marina ; Pelucchi, Emanuele
Izvornik
Crystal growth & design (1528-7483) 16
(2016), 4;
2363-2370
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
MOVPE ; metamorphic buffer ; InGaAs ; epitaxial layer ; surface morphology ; strain
Sažetak
We present a selection of stack designs for MOVPE grown InxGa1-xAs metamorphic buffer layers following various convex-down compositional continuous gradients of the In content, showing that defect generation and strain can be managed in a variety of ways, some rather unexpected (and unreported). Indeed, we observe that it is possible to grow surprisingly thick tensile strained layers on metamorphic substrates, without significant relaxation and defect generation. We believe our findings give significant insights to the investigation of strain, relaxation, and defect distribution in metamorphic buffer design, so to obtain properly engineered/tailored structures (the most successful ones already finding applications in device growth).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
