Pregled bibliografske jedinice broj: 947023
InAlAs solar cell on a GaAs substrate employing a graded In(x)Ga(1-x)As-InP metamorphic buffer layer
InAlAs solar cell on a GaAs substrate employing a graded In(x)Ga(1-x)As-InP metamorphic buffer layer // Applied physics letters, 102 (2013), 3; 3906, 4 doi:10.1063/1.4789521 (međunarodna recenzija, članak, znanstveni)
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Naslov
InAlAs solar cell on a GaAs substrate employing a graded In(x)Ga(1-x)As-InP metamorphic buffer layer
Autori
...Manganaro, Marina
Izvornik
Applied physics letters (0003-6951) 102
(2013), 3;
3906, 4
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
solar cell ; InAlAs ; metamorphic buffer
Sažetak
Single junction In(0.52)Al(0.48)As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded In(x)Ga(1-x)As/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 mu m thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm(2), and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 x 10(8) cm(-2).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
