Pregled bibliografske jedinice broj: 946966
Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure
Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure // Applied physics letters, 100 (2011), 15; 52112, 16 doi:10.1063/1.3703587 (međunarodna recenzija, članak, znanstveni)
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Naslov
Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure
Autori
Gocalinska, A ; Manganaro, Marina ; Pelucchi, E
Izvornik
Applied physics letters (0003-6951) 100
(2011), 15;
52112, 16
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
MOVPE ; metamorphic buffer ; InAs epitaxial layer ; wafer offcut-dependence ; surface morphology
Sažetak
A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted In(x)Ga(1-x)As metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the [111] B direction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703587]
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
