Naslov
Single-Photon-Emitting Optical Centers in Diamond Fabricated upon Sn Implantation

Autori
Tchernij, S. Ditalia ; Herzig, T. ; Forneris, J. ; Küpper, J. ; Pezzagna, S. ; Traina, P. ; Moreva, E. ; Degiovanni, I. P. ; Brida, G. ; Skukan, Natko ; Genovese, M. ; Jakšić, Milko ; Meijer, J. ; Olivero, P.

Izvornik
ACS Photonics (2330-4022) 4 (2017), 10; 2580-2586

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
diamond ; color centers ; ion implantation ; single-photon ; tin

Sažetak
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5, 620.3, 630.7, and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order autocorrelation emission functions, by means of Hanbury-Brown and Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence on the polarization of the excitation radiation with similar to 45% contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photophysical properties to the already well-known Si-V and Ge-V emitters, thus, providing results of interest from both the fundamental and applicative points of view

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA