Pregled bibliografske jedinice broj: 921458
Properties of Silicon Nanowires Studied by TEM-STM
Properties of Silicon Nanowires Studied by TEM-STM // 4th Nordic-Baltic Scanning Probe Microscopy Workshop Proceedings
Tartu, Estonija, 2002. str. 1-2 (predavanje, međunarodna recenzija, sažetak, znanstveni)
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Naslov
Properties of Silicon Nanowires Studied by TEM-STM
Autori
Erts, Donats ; Holmes, Justin D. ; Lyons, Daniel Mark ; Morris, Michael A. ; Olin, Hakan ; Olsson, Eva ; Polyakov, Boris ; Ryen, Lars ; Svensson, Krista
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
4th Nordic-Baltic Scanning Probe Microscopy Workshop Proceedings
/ - , 2002, 1-2
Skup
4th Nordic-Baltic Scanning Probe Microscopy Workshop
Mjesto i datum
Tartu, Estonija, 29.05.2002. - 31.05.2002
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Scanning Probe Microscopy, Nanowire ; Silicon ; Mechanical, Electronic
Sažetak
Nanowires are expected to play an important role in future electronic and optical devices as well as in nanoelectromechanical systems (NEMS). Here, we report on silicon nanowires grown on Au tip by a novel supercritical fluid solution-phase approach by the degrading diptehylsilane. To measure the electrical or mechanical properties of such nanowires is a difficult task due to the small sizes. Addressing this problem, we used an in -situ probing technique, TEM-STM, which is a combination of the scanning tunneling microscope (STM) and the transmission electron microscope (TEM). The TEM showed that the Si nanowires were several micrometers long and 40-90 nm wide. The current-voltage curves showed linear as well as highly non-linear behaviour. The mechanics were studied by electrostatic deflection, van der Waals interactions, and adhesion area measurements. The force constants of the nanowire were between 0.005-0.07 N/m.
Izvorni jezik
Engleski