Pregled bibliografske jedinice broj: 915695
TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design
TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design // EMN Mauritius Meeting 2017 Program & Abstract
Port Louis, Mauricijus, 2017. str. 20-21 (pozvano predavanje, podatak o recenziji nije dostupan, prošireni sažetak, znanstveni)
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Naslov
TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design
Autori
Tihomir Knežević ; Lis K. Nanver ; Tomislav Suligoj
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, prošireni sažetak, znanstveni
Izvornik
EMN Mauritius Meeting 2017 Program & Abstract
/ - , 2017, 20-21
Skup
EMN Mauritius Meeting 2017
Mjesto i datum
Port Louis, Mauricijus, 27.11.2017. - 30.11.2017
Vrsta sudjelovanja
Pozvano predavanje
Vrsta recenzije
Podatak o recenziji nije dostupan
Ključne riječi
TCAD, InGaAs/InP, SPAD, avalanche diodes
Sažetak
Developed TCAD-based simulation environment is exploited for calculation of the DCR in a 2D structure showing the critical positions in the design of a lateral device. In the analyzed standoff breakdown suppression design, the position of the maximum DCR and the total DCR were calculated. The optimal parameters of the design were proposed with respect to the minimization of the total DCR.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
