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Pregled bibliografske jedinice broj: 905705

Self-assembly of Ge quantum dots on periodically corrugated Si surfaces


Buljan, Maja; Facsko, S.; Delač Marion, I.; Mikšić Trontl, V.; Kralj, M.; Jerčinović, Marko; Baehtz, C.; Muecklich, A.; Holý, V.; Radić, Nikola; Grenzer, J.
Self-assembly of Ge quantum dots on periodically corrugated Si surfaces // Applied physics letters, 107 (2015), 20; 203101-203106 doi:10.1063/1.4935859 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 905705 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Self-assembly of Ge quantum dots on periodically corrugated Si surfaces

Autori
Buljan, Maja ; Facsko, S. ; Delač Marion, I. ; Mikšić Trontl, V. ; Kralj, M. ; Jerčinović, Marko ; Baehtz, C. ; Muecklich, A. ; Holý, V. ; Radić, Nikola ; Grenzer, J.

Izvornik
Applied physics letters (0003-6951) 107 (2015), 20; 203101-203106

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
quantum dots

Sažetak
The fabrication of regularly ordered Ge quantum dot arrays on Si surfaces usually requires extensive preparation processing, ensuring clean and atomically ordered substrates, while the ordering parameters are quite limited by the surface properties of the substrate. Here, we demonstrate a simple method for fabrication of ordered Ge quantum dots with highly tunable ordering parameters on rippled Si surfaces. The ordering is achieved by magnetron sputter deposition, followed by an annealing in high vacuum. We show that the type of ordering and lattice vector parameters of the formed Ge quantum dot lattice are determined by the crystallographic properties of the ripples, i.e., by their shape and orientation. Moreover, the ordering is achieved regardless the initial amorphisation of the ripples surface and the presence of a thin oxide layer.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
Project No. 2334

Ustanove:
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb

Poveznice na cjeloviti tekst rada:

doi aip.scitation.org

Citiraj ovu publikaciju:

Buljan, Maja; Facsko, S.; Delač Marion, I.; Mikšić Trontl, V.; Kralj, M.; Jerčinović, Marko; Baehtz, C.; Muecklich, A.; Holý, V.; Radić, Nikola; Grenzer, J.
Self-assembly of Ge quantum dots on periodically corrugated Si surfaces // Applied physics letters, 107 (2015), 20; 203101-203106 doi:10.1063/1.4935859 (međunarodna recenzija, članak, znanstveni)
Buljan, M., Facsko, S., Delač Marion, I., Mikšić Trontl, V., Kralj, M., Jerčinović, M., Baehtz, C., Muecklich, A., Holý, V., Radić, N. & Grenzer, J. (2015) Self-assembly of Ge quantum dots on periodically corrugated Si surfaces. Applied physics letters, 107 (20), 203101-203106 doi:10.1063/1.4935859.
@article{article, author = {Buljan, Maja and Facsko, S. and Dela\v{c} Marion, I. and Mik\v{s}i\'{c} Trontl, V. and Kralj, M. and Jer\v{c}inovi\'{c}, Marko and Baehtz, C. and Muecklich, A. and Hol\'{y}, V. and Radi\'{c}, Nikola and Grenzer, J.}, year = {2015}, pages = {203101-203106}, DOI = {10.1063/1.4935859}, keywords = {quantum dots}, journal = {Applied physics letters}, doi = {10.1063/1.4935859}, volume = {107}, number = {20}, issn = {0003-6951}, title = {Self-assembly of Ge quantum dots on periodically corrugated Si surfaces}, keyword = {quantum dots} }
@article{article, author = {Buljan, Maja and Facsko, S. and Dela\v{c} Marion, I. and Mik\v{s}i\'{c} Trontl, V. and Kralj, M. and Jer\v{c}inovi\'{c}, Marko and Baehtz, C. and Muecklich, A. and Hol\'{y}, V. and Radi\'{c}, Nikola and Grenzer, J.}, year = {2015}, pages = {203101-203106}, DOI = {10.1063/1.4935859}, keywords = {quantum dots}, journal = {Applied physics letters}, doi = {10.1063/1.4935859}, volume = {107}, number = {20}, issn = {0003-6951}, title = {Self-assembly of Ge quantum dots on periodically corrugated Si surfaces}, keyword = {quantum dots} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus
  • Nature Index


Citati:





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