Naslov
Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer

Autori
Francis, Daniel ; Ejeckam, Felix ; Wasserbauer, John ; Babic, Dubravko

Broj patenta
8, 945, 966

Godina
2015

Datum patenta
03.02.2015.

Sažetak
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide- gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Izvorni jezik
Engleski

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