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Pregled bibliografske jedinice broj: 887472

RF and milimeter-wave high-power semiconductor device

Babic, Dubravko I.; Diduck, Quentin E.; Schreiber, Alex
RF and milimeter-wave high-power semiconductor device
(2014)

CROSBI ID: 887472 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
RF and milimeter-wave high-power semiconductor device

Autori
Babic, Dubravko I. ; Diduck, Quentin E. ; Schreiber, Alex

Broj patenta
8, 796, 843

Godina
2014

Datum patenta
05.08.2014.

Sažetak
High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.

Izvorni jezik
Engleski



POVEZANOST RADA

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Dubravko Babić (autor)

Poveznice na cjeloviti tekst rada:

Pristup cjelovitom tekstu rada

Citiraj ovu publikaciju:

Babic, Dubravko I.; Diduck, Quentin E.; Schreiber, Alex
RF and milimeter-wave high-power semiconductor device
(2014)
Babic, D., Diduck, Q. & Schreiber, A. (2014) RF and milimeter-wave high-power semiconductor device, 8, 796, 843.
@patent{patent, author = {Babic, Dubravko I. and Diduck, Quentin E. and Schreiber, Alex}, year = {2014}, keywords = {}, title = {RF and milimeter-wave high-power semiconductor device}, keyword = {} }
@patent{patent, author = {Babic, Dubravko I. and Diduck, Quentin E. and Schreiber, Alex}, year = {2014}, keywords = {}, title = {RF and milimeter-wave high-power semiconductor device}, keyword = {} }

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