Pregled bibliografske jedinice broj: 886554
Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces
Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces // Proceedings of the 6th International Conference on InP and Related Materials paper ThG4
Santa Barbara (CA), Sjedinjene Američke Države, 1994. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces
Autori
Tan, I-H. ; Reaves, C. ; Dudley, J. J. ; Holmes Jr., A. L. ; Babić, D. I. ; Hu, E. L. ; Bowers, J. E. ; DenBaars, S.
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 6th International Conference on InP and Related Materials paper ThG4
/ - , 1994
Skup
6th International Conference on InP and Related Materials
Mjesto i datum
Santa Barbara (CA), Sjedinjene Američke Države, 28.03.1994. - 31.03.1994
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Bonding, Indium phosphide, Optical materials, Gallium arsenide, Optical microscopy, Solid state circuits, Ohmic contacts, Scanning electron microscopy, Electron optics, Reflectivity
Sažetak
We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.
Izvorni jezik
Engleski
