Naslov
Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM

Autori
Paneta, V. ; Erich, M. ; Fazinić, Stjepko ; Kokkoris, M. ; Kopsalis, I. ; Petrović, Stjepko ; Tadić, Tonči

Izvornik
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (0168-583X) 320 (2014); 6-11

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
d-NRA ; channeling implantation ; SEM

Sažetak
Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the 'random' ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d, p(0)) and O-16(d, p(0), alpha(0)) reactions respectively, at E-d, E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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