Morphological and Fractal Analysis of Thin Ge Films Deposited by Nanosecond Pulsed Laser Ablation

Dubček, Pavo; Pivac, Branko; Krstulović, Nikša; Milošević, Slobodan; Bernstorff, Sigrid

doi:10.1166/jnn.2017.13092

Pregled bibliografske jedinice broj: 864039

Morphological and Fractal Analysis of Thin Ge Films Deposited by Nanosecond Pulsed Laser Ablation

Dubček, Pavo; Pivac, Branko; Krstulović, Nikša; Milošević, Slobodan; Bernstorff, Sigrid

Morphological and Fractal Analysis of Thin Ge Films Deposited by Nanosecond Pulsed Laser Ablation // Journal of nanoscience and nanotechnology, 17 (2017), 6; 4009-4016 doi:10.1166/jnn.2017.13092 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 864039 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Morphological and Fractal Analysis of Thin Ge Films Deposited by Nanosecond Pulsed Laser Ablation

Autori
Dubček, Pavo ; Pivac, Branko ; Krstulović, Nikša ; Milošević, Slobodan ; Bernstorff, Sigrid

Izvornik
Journal of nanoscience and nanotechnology (1533-4880) 17 (2017), 6; 4009-4016

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge, Thin Films, Pulsed Laser Deposition, Atomic Force Microscopy, Small Angle X-ray Scattering, Fractals

Sažetak
We studied the formation and growth of thin Ge films deposited by pulsed laser ablation of a Ge target onto Si substrate at room temperature in helium protective atmosphere. 4 nsec long laser pulses at 1064 nm were applied at different pulse numbers. The morphology of the process was followed by atomic force microscopy (AFM) and grazing incidence small angle X-ray scattering (GISAXS), starting from isolated particles deposition to their coalescence into film and further film growth. The analysis in the real space gives a good description of the process, however, due to a large variation in the morphology, and thus the data, the resulting information may not be so clear. We have shown that fractal analysis provides additional insight into the process. Comparing the two techniques AFM and GISAXS the latter one is much more precise since it has a more precise probing length.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA

Projekti:
035-0352851-2856 - Laserska spektroskopija hladne plazme za obradu materijala (Milošević, Slobodan, MZOS ) ( CroRIS)
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
HRZZ-IP-2013-11-6135 - Poluvodičke kvantne strukture za napredne sklopove (QD STRUCTURES) (Pivac, Branko, HRZZ - 2013-11) ( CroRIS)
HRZZ-IP-2013-11-2753 - Dijagnostika Interakcije lasera i hladne plazme (LaCPID) (Milošević, Slobodan, HRZZ - 2013-11) ( CroRIS)