Pregled bibliografske jedinice broj: 843882
Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms
Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms // Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting
New Brunswick (NJ), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2016. str. 25-28 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms
Autori
Koričić, Marko ; Žilak, Josip ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting
/ - : Institute of Electrical and Electronics Engineers (IEEE), 2016, 25-28
Skup
2016 Bipolar/BiCMOS Circuits and Technology Meeting
Mjesto i datum
New Brunswick (NJ), Sjedinjene Američke Države, 26.09.2016. - 27.09.2016
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Horizontal Current Bipolar Transistor; breakdown voltage; BiCMOS technology; drift region; electrostatic shielding
Sažetak
Breakdown behavior of double-emitter reduced-surface-field horizontal current bipolar transistor is extensively analyzed by measurements and 3D device simulations. By the addition of the 2nd drift region, BVCEO of double-emitter structure is improved from 12 V up to 36 V and can be tuned by the length of the drift region. By increasing the length of the drift region, positive feedback loop of the common-emitter soft-breakdown can be completely broken making the BVCEO independent on transistor current gain. Transistors with BVCEO and BVCBO equal to the collector-substrate breakdown voltage are demonstrated. We also report that base current reversal in forced-VBE measurement does not occur and cannot be used for accurate determination of BVCEO of analyzed structures.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb