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Pregled bibliografske jedinice broj: 843882

Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms


Koričić, Marko; Žilak, Josip; Suligoj, Tomislav
Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms // Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting
New Brunswick (NJ), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2016. str. 25-28 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


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Naslov
Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms

Autori
Koričić, Marko ; Žilak, Josip ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting / - : Institute of Electrical and Electronics Engineers (IEEE), 2016, 25-28

Skup
2016 Bipolar/BiCMOS Circuits and Technology Meeting

Mjesto i datum
New Brunswick (NJ), Sjedinjene Američke Države, 26.09.2016. - 27.09.2016

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Horizontal Current Bipolar Transistor; breakdown voltage; BiCMOS technology; drift region; electrostatic shielding

Sažetak
Breakdown behavior of double-emitter reduced-surface-field horizontal current bipolar transistor is extensively analyzed by measurements and 3D device simulations. By the addition of the 2nd drift region, BVCEO of double-emitter structure is improved from 12 V up to 36 V and can be tuned by the length of the drift region. By increasing the length of the drift region, positive feedback loop of the common-emitter soft-breakdown can be completely broken making the BVCEO independent on transistor current gain. Transistors with BVCEO and BVCBO equal to the collector-substrate breakdown voltage are demonstrated. We also report that base current reversal in forced-VBE measurement does not occur and cannot be used for accurate determination of BVCEO of analyzed structures.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Marko Koričić (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Josip Žilak (autor)

Citiraj ovu publikaciju:

Koričić, Marko; Žilak, Josip; Suligoj, Tomislav
Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms // Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting
New Brunswick (NJ), Sjedinjene Američke Države: Institute of Electrical and Electronics Engineers (IEEE), 2016. str. 25-28 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Koričić, M., Žilak, J. & Suligoj, T. (2016) Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms. U: Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting.
@article{article, author = {Kori\v{c}i\'{c}, Marko and \v{Z}ilak, Josip and Suligoj, Tomislav}, year = {2016}, pages = {25-28}, keywords = {Horizontal Current Bipolar Transistor, breakdown voltage, BiCMOS technology, drift region, electrostatic shielding}, title = {Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms}, keyword = {Horizontal Current Bipolar Transistor, breakdown voltage, BiCMOS technology, drift region, electrostatic shielding}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {New Brunswick (NJ), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }
@article{article, author = {Kori\v{c}i\'{c}, Marko and \v{Z}ilak, Josip and Suligoj, Tomislav}, year = {2016}, pages = {25-28}, keywords = {Horizontal Current Bipolar Transistor, breakdown voltage, BiCMOS technology, drift region, electrostatic shielding}, title = {Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms}, keyword = {Horizontal Current Bipolar Transistor, breakdown voltage, BiCMOS technology, drift region, electrostatic shielding}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {New Brunswick (NJ), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }




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