Naslov
GISAXS study of shape and size of CdS nanocrystals formed in monochrystalline silicon by ion implantation

Autori
Dubček, Pavo ; Desnica, Uroš ; Desnica-Franković, Ida-Dunja ; Bernstorff, Sigrid ;

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Abstracts of the European Material Research Society (E-MRS) Spring Meeting 2002 Synchrotron Radiation and Materials Science / Amenitsch, Heinz - Strasbourg : European Materials Research Society, 2002

Skup
European Material Research Society (E-MRS) Spring Meeting 2002 Synchrotron Radiation and Materials Science

Mjesto i datum
Strasbourg, Francuska, 16.06.2002. - 22.06.2002

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
nanocrystals; quantum dots; X-ray scattering; SAXS; GISAXS; implantation; CdS

Sažetak
Grazing incidence small angle x-ray scattering (GISAXS) was applied to study size and shape as well as distribution of CdS nanocrystals formed in monochrystalline silicon substrate by separate implantation of constituent elements with the dose of 4.5*10E16 each and subsequently annealed at 1000°C. The ion energy was chosen to give the same (Gaussian) depth distribution. Apart from surface scattering, the 2D GISAXS patterns also show the particle contribution, which is twofold: difuse scattering centered at the direct beam position, and two streaks at both sides, crossed at the direct beam position, coming from the surface scattering from the facettes of the particles. The streak inclination to the sample surface cerresponds to the silicon 111 plane angle, where there is a minimum in nanocrystal growth energy. From the intensity distribution along the streak, the sizes of the facettes are determined and compared to the overall particle sizes determined from the difuse part of the scattering in order to gain information obout the nanocrystal shape.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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