Naslov
Nano- and micro-structured silicon for hybrid near-infrared photodetectors

Autori
Đerek, Vedran ; Głowacki, Eric Daniel ; Bednorz, Mateusz ; Demchyshyn, Stepan ; Sariciftci, Niyazi Serder ; Ivanda, Mile

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V / Laurent Vivien ; Lorenzo Pavesi ; Stefano Pelli - Brisel : Society of Photo-Optical Instrumentation Engineers (SPIE), 2016

ISBN
9781510601369

Skup
SPIE Photonics Europe 2016

Mjesto i datum
Bruxelles, Belgija, 03.04.2016. - 07.04.2016

Vrsta sudjelovanja
Pozvano predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Near infrared; Photodetectors; Silicon; Chemicals; Diodes; Etching; Nanostructuring; Photodiodes; Sensors; Optical properties

Sažetak
Structuring surface and bulk of crystalline silicon on different length scales can significantly alter its properties and possibly improve the performance of opto-electronic devices and sensors based on silicon. Different dominant feature scales are responsible for modification of some of electronic and optical properties of silicon. Several easily reproducible chemical methods for facile structuring of silicon on nano and micro- scales, based on both electroless and anodic etching of silicon in hydrofluoric acid based etchants, and chemical anisotropic etching of silicon in basic environments, are presented. We show how successive micro and nano structuring creates hierarchical silicon surfaces, which can be used to simultaneously exploit the advantages of both structuring feature length scales. Finally, we demonstrate a large increase in photocurrent obtained from a hybrid structured silicon/organic near- infrared photodetector. Improved silicon/6, 6’- dibromoindigo hybrid photodiodes were prepared by nano- and micro-structuring the silicon part of the heterojunction by wet chemical etching methods. Photocurrent and spectral responsivity were improved in comparison to planar diodes by up to two orders of magnitude by optimization of the silicon structuring process. We show that the improvement in photocurrent is not due to the increase in surface area or light trapping. © (2016) COPYRIGHT Society of Photo- Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija

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