Pregled bibliografske jedinice broj: 81815
Thermoelectric Effect Spectroscopy of Deep Levels in Semi-Insulating GaN
Thermoelectric Effect Spectroscopy of Deep Levels in Semi-Insulating GaN // Journal of Applied Physics, 92 (2002), 7; 4126-4128 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 81815 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Thermoelectric Effect Spectroscopy of Deep Levels in Semi-Insulating GaN
Autori
Desnica, Uroš ; Pavlović, Mladen ; Fang, Z.-Q. ; Look, David C.
Izvornik
Journal of Applied Physics (0021-8979) 92
(2002), 7;
4126-4128
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
deep levels; thermoelectric effect spectroscopy; TSC; GaN
Sažetak
The report of Thermoelectric effect spectroscopy (TEES) applied on semi-insulating (SI) GaN was presented.The type of TEES setup, especially suitable for film-on-substrate samples, was devised. TEES enabled determination of sign of observed deep traps. Using TEES and Thermally stimulated current spectroscopy measurements in combination with the Simultaneous Multiple Peak Analysis formalism all important trap parameters were determined. The shallowest identified electron and hole traps had activation energies Ec-0.09 eV and Ev+0.167 eV, respectively. Results indicate that both these traps, oppositely charged are present in the studied material in relatively high concentrations causing the electrical compensation and high resistivity.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
