Pregled bibliografske jedinice broj: 813934
Semiconductor Device and Method for Manufacturing Semiconductor Device
Semiconductor Device and Method for Manufacturing Semiconductor Device
(2012)
CROSBI ID: 813934 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Semiconductor Device and Method for Manufacturing Semiconductor Device
Autori
Suligoj, Tomislav ; Koričić, Marko ; Mochizuki, Hidenori ; Morita, So-ichi
Broj patenta
KR 20121162860 B1
Godina
2012
Datum patenta
28.06.2012.
Nositelj prava
Asahi Kasei EMD Corporation, ,
Sažetak
The present invention provides a configuration of a lateral bipolar transistor and a manufacturing method suitable for BiCMOS integraton of high-performance bipolar transistor (HCBT) and a CMOS transistor. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11, an emitter electrode 31A and a collector electrode 31B each of which is formed in the open region 21 and is composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched when the polysilicon film is etched to form the emitter electrode 31A and the collector electrode 31B.
Izvorni jezik
Lat
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb