Naslov
Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects

Autori
Poljak, Mirko ; Suligoj, Tomislav

Izvornik
Nano Research (1998-0124) 9 (2016), 6; 1723-1734

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
phosphorene nanoribbons ; atomistic quantum transport simulation ; edge defects ; transport gap ; mean free path ; electron and hole mobility

Sažetak
We present an extensive study on the electronic properties and carrier transport in phosphorene nanoribbons (PNRs) with edge defects using rigorous atomistic quantum transport simulations. This study reports the size- and defect-dependent scaling laws of the transport gap, mean free path and carrier mobility in PNRs of interest for future nanoelectronics applications. The results indicate that PNRs with armchair edges (aPNRs) are more immune to defects than zig-zag PNRs (zPNRs), while both PNR types exhibit superior immunity to defects in comparison to graphene nanoribbons (GNRs). The investigation of the mean free path demonstrated that even in the case of low defect density the transport in PNRs is diffusive, and that carrier mobility remains a meaningful transport parameter even in ultra-small PNRs. We found that the electron-hole mobility asymmetry (present in large-area phosphorene) is retained only in zPNRs for W > 4 nm, while the asymmetry is smoothed out by edge defect scattering for other cases. Furthermore, we showed that aPNRs outperform both zPNRs and GNRs in terms of carrier mobility, and that PNRs generally offer superior mobility-bandgap trade-off than GNRs and monolayer MoS2. This work identifies PNRs as a promising material for the extremely scaled transistor channels in the future post-silicon electronic technology, and serves as a persuasive argument for experimental work on nanostructured phosphorene.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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