Naslov
MOSFET Switch Equivalent Scheme for Turn-off Losses Estimation

Autori
Kulišić, Ljubomir

Izvornik
Automatika (0005-1144) 38 (1997), 1-2; 23-27

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
MOSFET; switching losses; modeling

Sažetak
An active semiconductor switch, implemented by using a field-effect transistor, is a component of a number of power converters up to 10 kW with operating frequency higher than approximately 10 kHz. Improvements in MOSFET switch characteristics, carried out during the assembly, can also lead to higher efficiency of active converters. Equivalent scheme parameters on current voltage waveforms and losses during the turning of of the MOSFET-switch were influenced numerically. After that, numerical results were tested by measuring the current-voltage values on a laboratory model of MOSFET-switch. MOSFET of the type BUZ-54 (U_DS=1000 V, I_D=5.3 A, R_DS(on)= 2 Ohm) was used for testing and the snubber was not included. The parameters which have a strong influence on current-voltagewaveforms during turning off, not taking into account the MOSFET switch parameters, are: parasitic inductance in the drain circuit L_sigma and resistance in the gate circuit R_S. The paper presents the simulation results of a MOSFET-switch durind turning off, obtained by changing the parasitic inductance L_sigma in the drain circuit and resistance R_S in the gate circuit. A comparison between simulation results and those obtained by measurement on a laboratory model of a MOSFET switch has confirmed the validity of the switch's mathematical model.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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