Pregled bibliografske jedinice broj: 773690
Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region
Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region // Proceedings of the 38th International Convention MIPRO 2015 / Biljanović, Petar (ur.).
Rijeka, 2015. str. 31-36 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 773690 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region
Autori
Koričić, Marko ; Žilak, Josip ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 38th International Convention MIPRO 2015
/ Biljanović, Petar - Rijeka, 2015, 31-36
ISBN
978-953-233-083-0
Skup
38th International Convention on Information and Communication Technology, Electronics and Microelectronics MIPRO 2015
Mjesto i datum
Opatija, Hrvatska, 25.05.2015. - 29.05.2015
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Horizontal current bipolar transistor; scaling; device simulation; parameter extraction
Sažetak
Emitter length scaling of HCBT with single polysilicon region is investigated by 3D device simulations with the emphasis on the high frequency characteristics. It is shown that collector current and junction capacitances have linear dependence on the emitter length. Collector resistance can be represented by two components which appear in parallel, one that scales proportionally with the emitter length and a constant part which describes lateral portion of the extrinsic transistor. Cut-off frequency is improved for small emitter area devices due to current spreading in the collector region which reduces the current density and causes the base push-out at higher collector currents. The effect cannot be captured by scalable transistor model and separate set of model parameters is needed for transistors with very small emitter size.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
