Pregled bibliografske jedinice broj: 76505
Thermal Response of a Semiconductor Rectifier Subjected to Surge Current
Thermal Response of a Semiconductor Rectifier Subjected to Surge Current // Proceedings of the Seventh International Conference held in Stanford / Lewis, W. R. ; Chin, J. H. ; Homsy, G. M. (ur.).
Swansea, 1991. str. 1589 -1599 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Thermal Response of a Semiconductor Rectifier Subjected to Surge Current
Autori
Damjanić, Frano B. ; Šelih, Jana ; Benčić, Zvonko ; Bešić, Andro
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the Seventh International Conference held in Stanford
/ Lewis, W. R. ; Chin, J. H. ; Homsy, G. M. - Swansea, 1991, 1589 -1599
Skup
Numerical Methods in Thermal Problems
Mjesto i datum
Swansea, Ujedinjeno Kraljevstvo, 08.07.1991. - 12.07.1991
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Power semiconductor devices; diodes; thyristors; rated surge current; nonlinear thermal analysis
Sažetak
A numerical technique for the prediction of one/more current pulses of PIN semiconductor devices is described. The technique is based on F.E. model for the transient nonlinear thermal analysis. A relationship between surge current and heat generated in semiconductor devices is established. Concept of the technique is based on monitoring silicon pellet temperature due to surge current. Ensuring that the surge current does not heat the silicon pellet above the critical temperature the semiconductor device can be appropriately selected. A commercial thyristor is considered and numerical results are presented. Comparison is made with semiconductor device manufacturer catalogue data.
Izvorni jezik
Engleski
