Pregled bibliografske jedinice broj: 75965
Formation of CdS nanocrystals in SiO2 by ion implantation
Formation of CdS nanocrystals in SiO2 by ion implantation // Journal of Non-Crystalline Solids, 299 (2002), B; 1100-1104 (međunarodna recenzija, članak, znanstveni)
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Naslov
Formation of CdS nanocrystals in SiO2 by ion implantation
Autori
Desnica, Uroš ; Desnica-Franković, Ida-Dunja ; Gamulin, Ozren ; White, C.W. ; Sonder, E. ; Zuhr, R.A.
Izvornik
Journal of Non-Crystalline Solids (0022-3093) 299
(2002), B;
1100-1104
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
nanocrystals; CdS; ion implantation; optical absorption
Sažetak
We present a systematic study of the influence of ion dose and post-implantation annealing on the synthesis and growth of CdS nanocrystals in a SiO2 matrix. Nanocrystals were obtained after implantation of monoenergetic Cd and S ions and subsequent annealing in a very wide range of annealing temperatures, Ta. The average size, as determined from the blue shift of bandgap Eg, varied from 3.5-4.5 to 10 nm, depending on implantation and annealing parameters. For the highest dose, 1017 ions/cm2, the synthesis of CdS phase starts already during implantation. For Ta above 700o C, large nanocrystals (9-10 nm) prevail for all doses. High energy optical transitions, identified as the E1A and E1B transitions of hexagonal CdS, were also observed after annealings at higher temperature.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- Chemical Abstracts