Pregled bibliografske jedinice broj: 756987
High Aspect Ratio PS‑b‑PMMA Block Copolymer Masks for Lithographic Applications
High Aspect Ratio PS‑b‑PMMA Block Copolymer Masks for Lithographic Applications // ACS Applied Materials & Interfaces, 6 (2014), 23; 21389-21396 doi:10.1021/am506391n (međunarodna recenzija, članak, znanstveni)
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Naslov
High Aspect Ratio PS‑b‑PMMA Block Copolymer Masks for Lithographic Applications
Autori
Ferrarese Lupi, F. ; Giammaria, T.J. ; Volpe, F.G. ; Lotto, F. ; Seguini, G. ; Pivac, Branko ; Laus, M. ; Perego, M. ;
Izvornik
ACS Applied Materials & Interfaces (1944-8244) 6
(2014), 23;
21389-21396
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
block copolymer; self-assembly; nanolithography; high aspect-ratio; rapid thermal processing; PS-b-PMMA
Sažetak
The control of the self-assembly (SA) process and nanostructure orientation in diblock copolymer (DBC)thick films is a crucial technological issue. Perpendicular orientation of the nanostructures in symmetric and asymmetric poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer films obtained by means of simple thermal treatments was demonstrated to occur in well-defined thickness windows featuring modest maximum values, thus resulting in low aspect ratio (h/d < 2) of the final lithographic mask. In this manuscript, the thickness window corresponding to the perpendicular orientation of the cylindrical structures in asymmetric DBC is investigated at high temperatures (190 °C ≤ T ≤ 310 °C) using a rapid thermal processing machine. A systematic study of the annealing conditions (temperature and time) of asymmetric PS-b-PMMA (Mn = 67.1, polydispersity index = 1.09) films, with thicknesses ranging from 10 to 400 nm, allowed ordered patterns, with a maximum value of orientational correlation length of 350 nm, to be obtained for film thicknesses up to 200 nm. The complete propagation of the cylindrical structures through the whole film thickness in a high aspect ratio PS template (h/d ≈ 7) is probed by lift-off process. Si nanopillars are obtained having the same lateral ordering and characteristic dimensions of the DBC lithographic mask as further confirmed by grazing-incidence small-angle X-ray scattering experiments.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Profili:
Branko Pivac
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
- MEDLINE