Pregled bibliografske jedinice broj: 756866
Semiconductor Device Comprising a Lateral Bipolar Transistor
Semiconductor Device Comprising a Lateral Bipolar Transistor
(2014)
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Naslov
Semiconductor Device Comprising a Lateral Bipolar Transistor
Autori
Suligoj, Tomislav ; Koričić, Marko ; Mochizuki, Hidenori ; Morita, So-ichi
Broj patenta
US8772837 B2
Godina
2014
Datum patenta
8.7.2014.
Sažetak
A configuration of a lateral transistor suited for the hybrid integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor. A semiconductor device includes a HCBT 100 and a CMOS transistor 200 hybrid integrated. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11. An emitter electrode 31A and a collector electrode 31B are formed in the open region 21 and are composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched When the polysilicon film is etched.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb