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Pregled bibliografske jedinice broj: 754049

Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost


Koričić, Marko; Žilak, Josip; Suligoj, Tomislav
Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost // IEEE electron device letters, 36 (2015), 2; 90-92 doi:10.1109/LED.2014.2385107 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 754049 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost

Autori
Koričić, Marko ; Žilak, Josip ; Suligoj, Tomislav

Izvornik
IEEE electron device letters (0741-3106) 36 (2015), 2; 90-92

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
BiCMOS technology; high-voltage bipolar transistors; charge sharing; fully depleted collector; reduced-surface-field (RESURF); horizontal current bipolar transistor (HCBT)

Sažetak
A novel double-emitter horizontal current bipolar transistor (HCBT) with reduced-surface-field (RESURF) region is presented. The structure is integrated with standard 0.18 µm CMOS, together with high-speed HCBT with BVCEO = 3.6 V and double-emitter HCBT with BVCEO = 12 V. The second RESURF drift region is formed by using a standard CMOS p-well implant for the formation of local substrate below the extrinsic collector. Collector-emitter breakdown is completely avoided by the E-field shielding. Breakdown occurs between the collector and the substrate and equals 36 V. The transistor is fabricated in HCBT BiCMOS process flow without the additional process steps and the use of additional lithography masks.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
HRZZ-IP-2013-11-9006 - Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore (HiPerSemi) (Suligoj, Tomislav, HRZZ ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Marko Koričić (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Josip Žilak (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Koričić, Marko; Žilak, Josip; Suligoj, Tomislav
Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost // IEEE electron device letters, 36 (2015), 2; 90-92 doi:10.1109/LED.2014.2385107 (međunarodna recenzija, članak, znanstveni)
Koričić, M., Žilak, J. & Suligoj, T. (2015) Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost. IEEE electron device letters, 36 (2), 90-92 doi:10.1109/LED.2014.2385107.
@article{article, author = {Kori\v{c}i\'{c}, Marko and \v{Z}ilak, Josip and Suligoj, Tomislav}, year = {2015}, pages = {90-92}, DOI = {10.1109/LED.2014.2385107}, keywords = {BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor (HCBT)}, journal = {IEEE electron device letters}, doi = {10.1109/LED.2014.2385107}, volume = {36}, number = {2}, issn = {0741-3106}, title = {Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost}, keyword = {BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor (HCBT)} }
@article{article, author = {Kori\v{c}i\'{c}, Marko and \v{Z}ilak, Josip and Suligoj, Tomislav}, year = {2015}, pages = {90-92}, DOI = {10.1109/LED.2014.2385107}, keywords = {BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor (HCBT)}, journal = {IEEE electron device letters}, doi = {10.1109/LED.2014.2385107}, volume = {36}, number = {2}, issn = {0741-3106}, title = {Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost}, keyword = {BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor (HCBT)} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





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