Naslov
Influence of posthydrogenization and thermal treatment on DOS in a DC magnetron deposited a-Si:H by thermostimulated conductivity

Autori
Gracin, Davor ; Desnica, Dunja ; Desnica, Uroš ; Radić, Nikola

Izvornik
Vacuum (0734-2101) 40 (1990), 1-2; 237-238

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
DC Magnetron Sputtering; Silicon; Trapping States; Urbach Tail

Sažetak
The a-Si:H films were deposited on glass and monocrystal silicon by DC magnetron sputtering using Ar-H mixture as a working gas. As reported earlier, a wide variety of properties of a-Si : H formed by this method was obtained, depending on the deposition conditions. The optical gap varied between 2.1 and 1.4 eV, the slope of the Urbach tail changed from 60 to 100 meV and a different degree of film density was obtained as well. After the deposition, samples were hydrogenated and/or heated in vacuum better than 1.3 × 10-6 mabar. The influence of this treatment on the density of states (DOS) in the gap of the material was examined by measuring the thermo-stimulated conductivity between 85-350 K which provides the information on the density of states in the 0.2-0.8 eV range from both band edges, giving the concentration and energy distribution of the trapping states. The results of these measurements, accompanied with spectral dependence of absorption coefficient near the band edge, were correlated with the initial material properties.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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