Pregled bibliografske jedinice broj: 74588
Capacitance Behaviour of np Crystalline Silicon and n-i-p Amorphous-silicon Photodiode for Color Detection
Capacitance Behaviour of np Crystalline Silicon and n-i-p Amorphous-silicon Photodiode for Color Detection // MIPRO 2001, 24th International Convention : Proceedings / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2001. str. 11-13 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Capacitance Behaviour of np Crystalline Silicon and n-i-p Amorphous-silicon Photodiode for Color Detection
Autori
Gradišnik, Vera ; Pavlović, Mladen ; Biljanović, Petar ; Pivac, Branko ; Zulim, Ivan
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
MIPRO 2001, 24th International Convention : Proceedings
/ Biljanović, Petar ; Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2001, 11-13
Skup
MIPRO 2001, 24th International Convention-Microelectronics, Electronics and Electronic Technologies (MEET)
Mjesto i datum
Opatija, Hrvatska, 21.05.2001. - 25.05.2001
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
color detection ; crystalline silicon ; amorphous silicon
Sažetak
The detection of fundamental components of light red-green-blue is based on transient behavior of a np silicon photodiode. Applied small voltage step to a photodiode illuminated with constant visible light, instantaneously changes the space-charge charge and quasi-neutral charges. The instantaneous changes of charge corresponds to dark current and photocurrent. The photocurrent is wavelength-dependent. Therefore, bias voltage switching simulation under different monochromatic and chromatic illumination condition are carried out to investigate the transient behavior. The Fast Fourier Transform (FFT) is used characterize the wavelength-dependent capacitance. The simulation results will be compared with experimental one obtained with amorphous silicon (a-Si:H) n-i-p photodiode. The obtained results demonstrate that the one-terminal standard devices wavelength dependent capacitance can be used for color detection.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike, strojarstva i brodogradnje, Split,
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Petar Biljanović
(autor)
Ivan Zulim
(autor)
Vera Gradišnik
(autor)
Branko Pivac
(autor)
Mladen Pavlović
(autor)