Naslov
The efects of deposition conditions and annealing temperature on the structure and morphology of Ta-N thin films

Autori
Salamon, Krešimir ; Milat, Ognjen ; Radić, Nikola ; Očko, Miroslav ; Bernstorff, Sigrid

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
16th International Conference on Thin Films (ICTF16) : Programme and book of abstracts / Radić, Nikola ; Zorc, Hrvoje - Zagreb : Hrvatsko Vakuumsko Društvo (HVD), 2014, 123-124

ISBN
978-953-98154-4-6

Skup
International Conference on Thin Films (16 ; 2014)

Mjesto i datum
Dubrovnik, Hrvatska, 13.10.2014. - 16.10.2014

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
annealing ; structure ; morphology ; Ta-N ; thin films

Sažetak
Tantalum nitrides (Ta-N) are used in a wide variety of applications such as diffusion barrier in magnetoresistive random access memory, wear and corrosion-resistant materials, high-speed thermal printing head, as well as thin film resistors. Structural properties of magnetron-sputter-deposited Ta-N thin layers were investigated in correlation with electrical properties. We focused on the impact of varying nitrogen content in the deposition chamber during synthesis as well as post-deposition annealing in the temperature range up to 950°C. Thin Ta-N films were grown on silicon wafers, pre-deposited with 100 nm SiO2 buffer layer, kept at room temperature (RT) or at 550°C during deposition. The films were structurally and morphologically characterized with grazing incidence X-ray techniques: specular reflectivity (XRR), diffraction (GIXRD) and small angle scattering (GISAXS). Structural features in films deposited at RT strongly depend on the Nitrogen partial flow rate (pN2) ; as pN2 increases the crystal structure changes: from amorphous Ta-rich (pN2 =10%), to fcc-TaN (pN2 =20-40%), to amorphous N-rich (pN2 >60%) ; the density of the films are correspondingly affected. Upon annealing, amorphous films crystallize into fcc-TaN (pN2=10%) and Ta4N5 or Ta3N5 (pN2>60%), while as deposited fcc-TaN films are stable up to 950°C with releasing stacking fault deformations. The loose homogenous structure of the films deposited at high pN2>60% anneals into particulate nanostructure with the average grain size increasing from 3nm (annealing @550°C) to 15 nm (annealing @950°C). All these findings are evaluated in relation with electrical measurements of the film resistivity to gain deeper insight into material parameters relevant for electronic devices.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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