Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix

Buljan, Maja; Radić, Nikola; Sancho-Parramon, Jordi; Janicki, Vesna; Grenzer, Joerg; Bogdanović-Radović, Ivančica; Siketić, Zdravko; Ivanda, Mile; Utrobičić, Antonija; Hübner, René; Weidauer, Rene; Vales, Vaclav; Endres, Jan; Car, Tihomir; Jerčinović, Marko; Rosko, Jerko; Bernstrorff, Sigrid; Holy, Vaclav

doi:10.1088/0957-4484/26/6/065602

Pregled bibliografske jedinice broj: 740750

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix

Buljan, Maja; Radić, Nikola; Sancho-Parramon, Jordi; Janicki, Vesna; Grenzer, Joerg; Bogdanović-Radović, Ivančica; Siketić, Zdravko; Ivanda, Mile; Utrobičić, Antonija; Hübner, René et al.

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix // Nanotechnology, 26 (2015), 065602-1 doi:10.1088/0957-4484/26/6/065602 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 740750 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix

Autori
Buljan, Maja ; Radić, Nikola ; Sancho-Parramon, Jordi ; Janicki, Vesna ; Grenzer, Joerg ; Bogdanović-Radović, Ivančica ; Siketić, Zdravko ; Ivanda, Mile ; Utrobičić, Antonija ; Hübner, René ; Weidauer, Rene ; Vales, Vaclav ; Endres, Jan ; Car, Tihomir ; Jerčinović, Marko ; Rosko, Jerko ; Bernstrorff, Sigrid ; Holy, Vaclav

Izvornik
Nanotechnology (0957-4484) 26 (2015); 065602-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
three-dimensional quantum dot lattice; Ge/Si core-shell quantum dots; Si/Ge layers; alumina glass matrix

Sažetak
We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA

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