Pregled bibliografske jedinice broj: 73748
Evaluation of the precipitate contribution to the infrared absortion of interstitial oxygen measurements in silicon
Evaluation of the precipitate contribution to the infrared absortion of interstitial oxygen measurements in silicon // Applied Physics Letters, 79 (2001), 4106-4108 (međunarodna recenzija, članak, znanstveni)
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Naslov
Evaluation of the precipitate contribution to the infrared absortion of interstitial oxygen measurements in silicon
Autori
Sassella, A. ; Borghesi, A. ; Pivac, Branko ; Porrini, M.
Izvornik
Applied Physics Letters (0003-6951) 79
(2001);
4106-4108
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon; defects; oxygen; infrared
Sažetak
The spurious contribution of oxide precipitates to the infrared absorption of interstitial oxygen in silicon is determined from spectra collected at 7 K for samples with different initial interstitial oxygen Oi concentration subjected to a three-step thermal treatment. These data can be used to correct the residual Oi values determined at room temperature following the standard procedure from the intenisty of the 1107 cm-1 absorption band. The error in residual Oi is found to reach values on the order of 2x1017 atoms/cm3 for samples with initial Oi content higher than 6.5x1017 atoms/cm3.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
