Naslov
Structural changes in amorphous silicon annealed at low temperatures

Autori
Pivac, Branko ; Dubček, Pavo ; Milat, Ognjen ; Zulim, Ivan

Vrsta, podvrsta i kategorija rada
Poglavlja u knjigama, znanstveni

Knjiga
Amorphous and Heterogeneous Silicon-Based Films - 2001

Urednik/ci
Stutzmann, M. ; Boyce, J.B. ; Cohen, J.D. ; Collins, R.W. ; Hanna, J

Izdavač
Materials Research Society

Grad
Warrendale (PA)

Godina
2001

Raspon stranica
A19.9.1-A19.9.6

ISBN
1-55899-600-1

Ključne riječi
amorphous silicon, defects, light soaking

Sažetak
The light-induced creation of dangling bonds in amorphous silicon, called Staebler-Wronski effect is major obstacle to the widespread technological application of this material. In order to stabilize solar cells characteristics, devices are exposed to the light soaking (aging) accompanied by low temperature annealing. We used FTIR, X-ray reflectivity and SAXS analysis to monitor the structural changes occurring during the low temperature annealing of undoped a-Si:H films. FTIR results show that hydrogen is moved from positions (voids) where it was accumulated unbonded to silicon and it was trapped at dangling bonds. SAXS measurements confirmed the existence of the voids of about 2.5 nm in diameter. Hydrogen removal from the voids was confirmed by SAXS and X-ray reflectivity measurements showing that this treatment influenced their size and redistribution.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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